课程说明及重点
                            
                            高压制程电子产品一般最大的可靠性问题是静电放电(ESD) 很差、闩锁(LU)能力也很差,而且模拟高压电路输出端口又会占很大面积,这会影响使其ESD能力通常非常不佳。ESD)/LU破坏是影响IC可靠性的重要因素也是延缓产品上市的主因,因此无论由制程上、设计上全方位的防护措施是必要的。本课程是高压集成IC 
                            ESD/LU防护设计上之实务课程,更是各高压集成IC产品ESD可靠度防护上最热门的技术。
                          本课程将从各种HV CMOS元器件、晶圆厂技术平台、HV组件的汲极工程、高压元器件ESD/LU能力如何测试介绍起,进而谈论HV 
                            CMOS 的各电性、可靠度缺点、晶圆厂HV ESD/LU 防护设计法则及各种ESD/LU保护策略及如何保护HV 
                            LDMOS与HV 集成电路ESD/LU防护实际案例分析,最后期许学员能对HV制程工艺及组件结构充分理解,并熟悉HV 
                            IC静电防护及LU免疫设计之防制意义。
                            
                            授课对象
                            
                            现职从事模拟IC与电子产品之RD设计、布局、制造、产品应用与品管、品保、FA相关技术人员 (对ESD/LU防护已有认识者)。
                            
                            课程大纲
                          
                            第一阶段 :
                          I. High-Voltage CMOS Devices
                           ◎ What’s an HV Technology ?
                           ◎ How These Products Use the HV Process ?
                           ◎ Foundry Technology Platform
                          II. Device Engineering for HV Devices
                           ◎ Basic Concepts of an HV IC
                           ◎ Well Engineerings
                           ◎ Electrical Behaviors
                          III. HV ESD/LU Testing Issues
                           ◎ How to Do an HV IC ESD Testing ?
                           ◎ How to Do an HV IC Latch-up Testing ?
                          第二阶段:
                          III. Weakness Issues in the HV CMOS Process
                           ◎ High Resistive ESD Element Influence
                           ◎ Intrinsic HV nMOS Reliability Problem
                           ◎ Why ESD Level of the HV-CMOS I/O Protection Circuit 
                            is So Bad ?
                           ◎ How About the Occurred Failure Mode in the HV 
                            CMOS ?
                           ◎ HV Multi-Finger O/P nMOS Driver Protection Challenge
                           ◎ Impact of Low-Holding-Voltage Issue in HV CMOS 
                            Technology
                          IV HV ESD/LU Rules (ex: 5V/30V/40V)
                           ◎ Foundry HV ESD Design Rules
                           ◎ Foundry HV LU Design Rules
                          V. Some Strategies of ESD/LU Protection Design in 
                            a HV CMOS Process
                          ◎ How to Improve Low Vh ?
                          ◎ How to Adjust Vt1 ?
                          ◎ How to Guarantee That Vt2 >Vt1 ?
                          ◎ How About the Single Finger Width Effect ?
                          ◎ Which One Device Is More Better ? 
                          ◎ How About the N-Well Effect in a HV Drain Side 
                            ?
                          Day 3:
                          VI. How to Protect the HV LDMOS?
                          ◎How to Do a Good ESD Immunity in the HV LDMOS?
                           ◎ESD Protection Methods & Patents for the HV 
                            LDMOS
                          VII. (HV ESD/LU Cases Study)
                          VIII. Summary